SQM110N05-06L_GE3

Vishay Siliconix SQM110N05-06L_GE3

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  • SQM110N05-06L_GE3
  • Vishay Siliconix
  • MOSFET N-CH 55V 110A TO263
  • Transistors - FETs, MOSFETs - Single
  • SQM110N05-06L_GE3 Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/SQM110N05-06L-GE3Lead free / RoHS Compliant
  • 4737
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
SQM110N05-06L_GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 55V 110A TO263
Package
Tube
Series
TrenchFET®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (D²Pak)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
157W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Rds On (Max) @ Id, Vgs
6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4440 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SQM110N05-06L_GE3 Гарантии

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