Vishay Siliconix SIE812DF-T1-E3
- SIE812DF-T1-E3
- Vishay Siliconix
- MOSFET N-CH 40V 60A 10POLARPAK
- Transistors - FETs, MOSFETs - Single
- SIE812DF-T1-E3 Лист данных
- 10-PolarPAK® (L)
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 3577
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SIE812DF-T1-E3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 40V 60A 10POLARPAK |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 10-PolarPAK® (L) |
Supplier Device Package 10-PolarPAK® (L) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 5.2W (Ta), 125W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 60A (Tc) |
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 8300 pF @ 20 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 10-PolarPAK® (L) |
SIE812DF-T1-E3 Гарантии
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