SIE810DF-T1-GE3

Vishay Siliconix SIE810DF-T1-GE3

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  • SIE810DF-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 20V 60A 10POLARPAK
  • Transistors - FETs, MOSFETs - Single
  • SIE810DF-T1-GE3 Лист данных
  • 10-PolarPAK® (L)
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/SIE810DF-T1-GE3Lead free / RoHS Compliant
  • 13419
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
SIE810DF-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 20V 60A 10POLARPAK
Package
Jinftry-Reel®
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (L)
Supplier Device Package
10-PolarPAK® (L)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
13000 pF @ 10 V
Vgs (Max)
±12V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Package_case
10-PolarPAK® (L)

SIE810DF-T1-GE3 Гарантии

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