Vishay Siliconix SIE810DF-T1-E3
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- SIE810DF-T1-E3
- Vishay Siliconix
- MOSFET N-CH 20V 60A 10POLARPAK
- Transistors - FETs, MOSFETs - Single
- SIE810DF-T1-E3 Лист данных
- 10-PolarPAK® (L)
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 2491
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SIE810DF-T1-E3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 20V 60A 10POLARPAK |
| Package Tape & Reel (TR) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 10-PolarPAK® (L) |
| Supplier Device Package 10-PolarPAK® (L) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 5.2W (Ta), 125W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 60A (Tc) |
| Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 10 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V |
| Package_case 10-PolarPAK® (L) |
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