Toshiba Semiconductor and Storage TK14G65W5,RQ
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- TK14G65W5,RQ
- Toshiba Semiconductor and Storage
- MOSFET N-CH 650V 13.7A D2PAK
- Transistors - FETs, MOSFETs - Single
- TK14G65W5,RQ Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 837
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number TK14G65W5,RQ |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 650V 13.7A D2PAK |
| Package Tape & Reel (TR) |
| Series DTMOSIV |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package D2PAK |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 130W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 13.7A (Ta) |
| Rds On (Max) @ Id, Vgs 300mOhm @ 6.9A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 690µA |
| Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 300 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TK14G65W5,RQ Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TK14G65W5,RQ ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
TK14G65W5,RQ сопутствующие товары
Комментарии
Toshiba Semiconductor and Storage
TK14G65W,RQ
MOSFET N-CH 650V 13.7A D2PAK
TPH5200FNH,L1Q
MOSFET N-CH 650V 13.7A D2PAK
TPW1R005PL,L1Q
MOSFET N-CH 650V 13.7A D2PAK
TK20V60W5,LVQ
MOSFET N-CH 650V 13.7A D2PAK
TPH4R50ANH,L1Q
MOSFET N-CH 650V 13.7A D2PAK
TPH4R008NH,L1Q
MOSFET N-CH 650V 13.7A D2PAK
TPH2R306NH,L1Q
MOSFET N-CH 650V 13.7A D2PAK
TK17E65W,S1X
MOSFET N-CH 650V 13.7A D2PAK
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Toshiba 3rd Generation Silicon Carbide MOSFET
Toshiba 3rd Generation Silicon Carbide MOSFET
Toshiba's third generation SiC MOSFETs are designed for high power industrial applications such as 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters and bidirectional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs help reduce power dissipation and increase power density. Thanks to SiC technology, these devices offer higher voltages, faster switching, and lower on-resistance. Toshiba'
