Toshiba Semiconductor and Storage TK17E65W,S1X
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- TK17E65W,S1X
- Toshiba Semiconductor and Storage
- MOSFET N-CH 650V 17.3A TO220
- Transistors - FETs, MOSFETs - Single
- TK17E65W,S1X Лист данных
- TO-220-3
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 23560
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number TK17E65W,S1X |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 650V 17.3A TO220 |
| Package Cut Tape (CT) |
| Series DTMOSIV |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 165W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 17.3A (Ta) |
| Rds On (Max) @ Id, Vgs 200mOhm @ 8.7A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
TK17E65W,S1X Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TK17E65W,S1X ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
TK17E65W,S1X сопутствующие товары
Комментарии
Toshiba Semiconductor and Storage
TK16A60W,S4VX
MOSFET N-CH 600V 15.8A TO220SIS
TPWR8503NL,L1Q
MOSFET N-CH 600V 15.8A TO220SIS
TK20A60W5,S5VX
MOSFET N-CH 600V 15.8A TO220SIS
TK13A65U(STA4,Q,M)
MOSFET N-CH 600V 15.8A TO220SIS
TPWR8004PL,L1Q
MOSFET N-CH 600V 15.8A TO220SIS
.jpg)
TK12J60U(F)
MOSFET N-CH 600V 15.8A TO220SIS
TK16G60W,RVQ
MOSFET N-CH 600V 15.8A TO220SIS
TK20A60W,S5VX
MOSFET N-CH 600V 15.8A TO220SIS
What is diode?
What are diodes and their characteristics in electronics?
Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
Toshiba TLP5222 gate driver
Toshiba TLP5222 gate driver
Toshiba TLP5222 Gate Driver Optocouplers provide a highly integrated, versatile, 2.5A output current gate driver in a long creepage and gap SO16L package. The TLP5222 includes functions such as desaturation detection, isolated fault status feedback, soft gate shutdown, active Miller clamp, undervoltage lockout and automatic fault status reset.
Toshiba TLP5222 gate driver optocoupler integrates two infrared light emitting diodes (LEDs) and two high gain high speed
