Toshiba Semiconductor and Storage TK16G60W,RVQ
- TK16G60W,RVQ
- Toshiba Semiconductor and Storage
- MOSFET N CH 600V 15.8A D2PAK
- Transistors - FETs, MOSFETs - Single
- TK16G60W,RVQ Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 16935
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number TK16G60W,RVQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N CH 600V 15.8A D2PAK |
Package Jinftry-Reel® |
Series DTMOSIV |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D2PAK |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 130W (Tc) |
FET Type N-Channel |
FET Feature Super Junction |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta) |
Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V |
Vgs(th) (Max) @ Id 3.7V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TK16G60W,RVQ Гарантии
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The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
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