Toshiba Semiconductor and Storage TK14G65W,RQ
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- TK14G65W,RQ
- Toshiba Semiconductor and Storage
- MOSFET N-CH 650V 13.7A D2PAK
- Transistors - FETs, MOSFETs - Single
- TK14G65W,RQ Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 21743
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number TK14G65W,RQ |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 650V 13.7A D2PAK |
| Package Jinftry-Reel® |
| Series DTMOSIV |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package D2PAK |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 130W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 13.7A (Ta) |
| Rds On (Max) @ Id, Vgs 250mOhm @ 6.9A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 690µA |
| Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 300 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TK14G65W,RQ Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TK14G65W,RQ ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
TK14G65W,RQ сопутствующие товары
Комментарии
Toshiba Semiconductor and Storage
TPH5200FNH,L1Q
MOSFET N-CH 250V 26A 8SOP
TPW1R005PL,L1Q
MOSFET N-CH 250V 26A 8SOP
TK20V60W5,LVQ
MOSFET N-CH 250V 26A 8SOP
TPH4R50ANH,L1Q
MOSFET N-CH 250V 26A 8SOP
TPH4R008NH,L1Q
MOSFET N-CH 250V 26A 8SOP
TPH2R306NH,L1Q
MOSFET N-CH 250V 26A 8SOP
TK17E65W,S1X
MOSFET N-CH 250V 26A 8SOP
TK16A60W,S4VX
MOSFET N-CH 250V 26A 8SOP
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
