IXYP15N65C3

IXYS IXYP15N65C3

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXYP15N65C3
  • IXYS
  • IGBT 650V 38A 200W TO220
  • Transistors - IGBTs - Single
  • IXYP15N65C3 Лист данных
  • TO-220-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXYP15N65C3Lead free / RoHS Compliant
  • 4621
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXYP15N65C3
Category
Transistors - IGBTs - Single
Manufacturer
IXYS
Description
IGBT 650V 38A 200W TO220
Package
Tube
Series
GenX3™, XPT™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Power - Max
200 W
Input Type
Standard
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
38 A
Voltage - Collector Emitter Breakdown (Max)
650 V
IGBT Type
PT
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 15A
Gate Charge
19 nC
Td (on/off) @ 25°C
15ns/68ns
Test Condition
400V, 15A, 20Ohm, 15V
Current - Collector Pulsed (Icm)
80 A
Switching Energy
270µJ (on), 230µJ (off)
Package_case
TO-220-3

IXYP15N65C3 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXYP15N65C3

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXYP15N65C3

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXYP15N65C3

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXYP15N65C3 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXYP15N65C3
IXGA12N120A2,https://www.jinftry.ru/product_detail/IXYP15N65C3
IXGA12N120A2

IGBT 1200V 24A 75W TO263

IXYP8N90C3,https://www.jinftry.ru/product_detail/IXYP15N65C3
IXYP8N90C3

IGBT 1200V 24A 75W TO263

IXYY8N90C3,https://www.jinftry.ru/product_detail/IXYP15N65C3
IXYY8N90C3

IGBT 1200V 24A 75W TO263

IXGP2N100A,https://www.jinftry.ru/product_detail/IXYP15N65C3
IXGP2N100A

IGBT 1200V 24A 75W TO263

IXGP30N60B2,https://www.jinftry.ru/product_detail/IXYP15N65C3
IXGP30N60B2

IGBT 1200V 24A 75W TO263

IXGA42N30C3,https://www.jinftry.ru/product_detail/IXYP15N65C3
IXGA42N30C3

IGBT 1200V 24A 75W TO263

IXGQ170N30PB,https://www.jinftry.ru/product_detail/IXYP15N65C3
IXGQ170N30PB

IGBT 1200V 24A 75W TO263

IXYP15N65C3D1M,https://www.jinftry.ru/product_detail/IXYP15N65C3
IXYP15N65C3D1M

IGBT 1200V 24A 75W TO263

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP