IXYS IXGP2N100A
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXGP2N100A
- IXYS
- IGBT 1000V 4A 25W TO220AB
- Transistors - IGBTs - Single
- IXGP2N100A Лист данных
- TO-220-3
- Tube
-
Lead free / RoHS Compliant - 2590
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXGP2N100A |
| Category Transistors - IGBTs - Single |
| Manufacturer IXYS |
| Description IGBT 1000V 4A 25W TO220AB |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220-3 |
| Power - Max 25 W |
| Input Type Standard |
| Reverse Recovery Time (trr) - |
| Current - Collector (Ic) (Max) 4 A |
| Voltage - Collector Emitter Breakdown (Max) 1000 V |
| IGBT Type - |
| Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 2A |
| Gate Charge 7.8 nC |
| Td (on/off) @ 25°C 15ns/300ns |
| Test Condition 800V, 2A, 150Ohm, 15V |
| Current - Collector Pulsed (Icm) 8 A |
| Switching Energy 260µJ (off) |
| Package_case TO-220-3 |
IXGP2N100A Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXGP2N100A ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXGP2N100A сопутствующие товары
Комментарии
IXYS
IXGA42N30C3
IGBT 300V 223W TO263AA
IXGQ170N30PB
IGBT 300V 223W TO263AA
IXYP15N65C3D1M
IGBT 300V 223W TO263AA
IXGP2N100
IGBT 300V 223W TO263AA
IXGP12N120A2
IGBT 300V 223W TO263AA
IXYP20N65C3D1
IGBT 300V 223W TO263AA
IXGP30N60C3
IGBT 300V 223W TO263AA
IXGH12N120A2D1
IGBT 300V 223W TO263AA
What Are Transistors and How Do They Work?
What is the definition of transistors?
What is the structure of a transistor?
How does a transistor work?
Classifications of a transistor
What are the functions of transistors?
Amplification function principle
What are transistors used for?
Relevant data and statistics of transistors for reference
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
