IXYS IXGH42N30C3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXGH42N30C3
- IXYS
- IGBT 300V 223W TO247
- Transistors - IGBTs - Single
- IXGH42N30C3 Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 4468
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXGH42N30C3 |
| Category Transistors - IGBTs - Single |
| Manufacturer IXYS |
| Description IGBT 300V 223W TO247 |
| Package Tube |
| Series GenX3™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247AD |
| Power - Max 223 W |
| Input Type Standard |
| Reverse Recovery Time (trr) - |
| Current - Collector (Ic) (Max) - |
| Voltage - Collector Emitter Breakdown (Max) 300 V |
| IGBT Type PT |
| Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 42A |
| Gate Charge 76 nC |
| Td (on/off) @ 25°C 21ns/113ns |
| Test Condition 200V, 21A, 10Ohm, 15V |
| Current - Collector Pulsed (Icm) 250 A |
| Switching Energy 120µJ (on), 150µJ (off) |
| Package_case TO-247-3 |
IXGH42N30C3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXGH42N30C3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXGH42N30C3 сопутствующие товары
Комментарии
IXYS
IXGA12N120A2
IGBT 1200V 24A 75W TO263
IXYP8N90C3
IGBT 1200V 24A 75W TO263
IXYY8N90C3
IGBT 1200V 24A 75W TO263
IXGP2N100A
IGBT 1200V 24A 75W TO263
IXGP30N60B2
IGBT 1200V 24A 75W TO263
IXGA42N30C3
IGBT 1200V 24A 75W TO263
IXGQ170N30PB
IGBT 1200V 24A 75W TO263
IXYP15N65C3D1M
IGBT 1200V 24A 75W TO263
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
