Infineon Technologies IRF3315PBF
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- IRF3315PBF
- Infineon Technologies
- MOSFET N-CH 150V 23A TO220AB
- Transistors - FETs, MOSFETs - Single
- IRF3315PBF Лист данных
- TO-220-3
- Bulk
-
Lead free / RoHS Compliant - 1026
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IRF3315PBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 150V 23A TO220AB |
| Package Bulk |
| Series HEXFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220AB |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 94W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 150 V |
| Current - Continuous Drain (Id) @ 25°C 23A (Tc) |
| Rds On (Max) @ Id, Vgs 70mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
IRF3315PBF Гарантии
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