Infineon Technologies IPP072N10N3GXKSA1
- IPP072N10N3GXKSA1
- Infineon Technologies
- MOSFET N-CH 100V 80A TO220-3
- Transistors - FETs, MOSFETs - Single
- IPP072N10N3GXKSA1 Лист данных
- TO-220-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 26592
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IPP072N10N3GXKSA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 100V 80A TO220-3 |
Package Cut Tape (CT) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package PG-TO220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 150W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
Rds On (Max) @ Id, Vgs 7.2mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4910 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case TO-220-3 |
IPP072N10N3GXKSA1 Гарантии
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