Infineon Technologies IRF1010NPBF
- IRF1010NPBF
- Infineon Technologies
- MOSFET N-CH 55V 85A TO220AB
- Transistors - FETs, MOSFETs - Single
- IRF1010NPBF Лист данных
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 17604
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IRF1010NPBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 55V 85A TO220AB |
Package Tube |
Series HEXFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AB |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 180W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 55 V |
Current - Continuous Drain (Id) @ 25°C 85A (Tc) |
Rds On (Max) @ Id, Vgs 11mOhm @ 43A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3210 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
IRF1010NPBF Гарантии
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