Infineon Technologies IPT020N10N3ATMA1
- IPT020N10N3ATMA1
- Infineon Technologies
- MOSFET N-CH 100V 300A 8HSOF
- Transistors - FETs, MOSFETs - Single
- IPT020N10N3ATMA1 Лист данных
- 8-PowerSFN
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 18232
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IPT020N10N3ATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 100V 300A 8HSOF |
Package Tape & Reel (TR) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerSFN |
Supplier Device Package PG-HSOF-8-1 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 375W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 300A (Tc) |
Rds On (Max) @ Id, Vgs 2mOhm @ 150A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 272µA |
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 11200 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case 8-PowerSFN |
IPT020N10N3ATMA1 Гарантии
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