Infineon Technologies IPB017N10N5ATMA1
- IPB017N10N5ATMA1
- Infineon Technologies
- MOSFET N-CH 100V 180A TO263-7
- Transistors - FETs, MOSFETs - Single
- IPB017N10N5ATMA1 Лист данных
- TO-263-7, D²Pak (6 Leads + Tab)
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3604
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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Part Number IPB017N10N5ATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 100V 180A TO263-7 |
Package Tape & Reel (TR) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package PG-TO263-7 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 375W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 180A (Tc) |
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id 3.8V @ 279µA |
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 15600 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case TO-263-7, D²Pak (6 Leads + Tab) |
IPB017N10N5ATMA1 Гарантии
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