IPB025N10N3 G

Infineon Technologies IPB025N10N3 G

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  • IPB025N10N3 G
  • Infineon Technologies
  • MOSFET N-CH 100V 180A TO263-7
  • Transistors - FETs, MOSFETs - Single
  • IPB025N10N3 G Лист данных
  • TO-263-7, D2Pak (6 Leads + Tab)
  • TO-263-7, D2Pak (6 Leads + Tab)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IPB025N10N3-GLead free / RoHS Compliant
  • 9948
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IPB025N10N3 G
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 180A TO263-7
Package
TO-263-7, D2Pak (6 Leads + Tab)
Series
OptiMOS?
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Supplier Device Package
PG-TO263-7
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Rds On (Max) @ Id, Vgs
2.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs
206nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
14800pF @ 50V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs (Max)
20V
Package_case
TO-263-7, D2Pak (6 Leads + Tab)

IPB025N10N3 G Гарантии

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