Infineon Technologies IPB025N10N3 G
- IPB025N10N3 G
- Infineon Technologies
- MOSFET N-CH 100V 180A TO263-7
- Transistors - FETs, MOSFETs - Single
- IPB025N10N3 G Лист данных
- TO-263-7, D2Pak (6 Leads + Tab)
- TO-263-7, D2Pak (6 Leads + Tab)
- Lead free / RoHS Compliant
- 9948
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IPB025N10N3 G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 100V 180A TO263-7 |
Package TO-263-7, D2Pak (6 Leads + Tab) |
Series OptiMOS? |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-7, D2Pak (6 Leads + Tab) |
Supplier Device Package PG-TO263-7 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 100V |
Current - Continuous Drain (Id) @ 25°C 180A (Tc) |
Rds On (Max) @ Id, Vgs 2.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 275µA |
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 50V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Vgs (Max) 20V |
Package_case TO-263-7, D2Pak (6 Leads + Tab) |
IPB025N10N3 G Гарантии
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