Infineon Technologies IPD30N03S2L20ATMA1
- IPD30N03S2L20ATMA1
- Infineon Technologies
- MOSFET N-CH 30V 30A TO252-31
- Transistors - FETs, MOSFETs - Single
- IPD30N03S2L20ATMA1 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 25362
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IPD30N03S2L20ATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 30V 30A TO252-31 |
Package Cut Tape (CT) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package PG-TO252-3-11 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 60W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 30A (Tc) |
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id 2V @ 23µA |
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD30N03S2L20ATMA1 Гарантии
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