Infineon Technologies IRFH7914TRPBF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IRFH7914TRPBF
- Infineon Technologies
- MOSFET N-CH 30V 15A/35A 8PQFN
- Transistors - FETs, MOSFETs - Single
- IRFH7914TRPBF Лист данных
- 8-PowerTDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 19599
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IRFH7914TRPBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 30V 15A/35A 8PQFN |
| Package Cut Tape (CT) |
| Series HEXFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package 8-PQFN (5x6) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.1W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 15A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs 8.7mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 15 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-PowerTDFN |
IRFH7914TRPBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRFH7914TRPBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IRFH7914TRPBF сопутствующие товары
Комментарии
Infineon Technologies
BSZ130N03MS G
MOSFET N-CH 30V 35A TSDSON-8
IRF6217TRPBF
MOSFET N-CH 30V 35A TSDSON-8
BSZ130N03LS G
MOSFET N-CH 30V 35A TSDSON-8
IPD70R1K4CEAUMA1
MOSFET N-CH 30V 35A TSDSON-8
IPD78CN10NGATMA1
MOSFET N-CH 30V 35A TSDSON-8
IPD350N06LGBTMA1
MOSFET N-CH 30V 35A TSDSON-8
IPD70R1K4P7SAUMA1
MOSFET N-CH 30V 35A TSDSON-8
IPD075N03LGATMA1
MOSFET N-CH 30V 35A TSDSON-8
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
Infineon's security chips are the first to receive CLS-Ready certification from the Singapore Cyber Security Agency
Infineon's security chips are the first to receive CLS-Ready certification from the Singapore Cyber Security Agency
Infineon Technologies AG's OPTIGA™ Trust M security chip has become the first security platform to be CLS-Ready certified by the Cyber Security Agency of Singapore (CSA). As the number of IoT devices increases, so does the number of cyber-attack incidents. But the security issues of Internet of Things (IoT) and Internet of Things (IoTT) devices are often overlooked, and pe
Infineon Technologies-Gate driver reinforced isolation
HV driver with 6kV isolation in a SO-8W package
Flip chip package increases power density
200V half-bridge driver in SOIC-8 package
Fluence and Northvolt to co-develop battery technology for
Grid-scale energy storage
Global consortium for power system operators and research institutes
Addionics, Saint-Gobain Ceramics team on solid state battery tech
Lead perovskite boosts solar cell efficiency over 25 percent
200kW SiC inverter hits 99 percent efficiency
