Infineon Technologies BSZ180P03NS3EGATMA1
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- BSZ180P03NS3EGATMA1
- Infineon Technologies
- MOSFET P-CH 30V 9A/39.5A TSDSON
- Transistors - FETs, MOSFETs - Single
- BSZ180P03NS3EGATMA1 Лист данных
- 8-PowerTDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 25641
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number BSZ180P03NS3EGATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET P-CH 30V 9A/39.5A TSDSON |
| Package Tape & Reel (TR) |
| Series OptiMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package PG-TSDSON-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.1W (Ta), 40W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 9A (Ta), 39.5A (Tc) |
| Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 3.1V @ 48µA |
| Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 15 V |
| Vgs (Max) ±25V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case 8-PowerTDFN |
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