Infineon Technologies IPAN65R650CEXKSA1
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- IPAN65R650CEXKSA1
- Infineon Technologies
- MOSFET N-CH 650V 10.1A TO220
- Transistors - FETs, MOSFETs - Single
- IPAN65R650CEXKSA1 Лист данных
- TO-220-3 Full Pack
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 5808
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPAN65R650CEXKSA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 650V 10.1A TO220 |
| Package Tape & Reel (TR) |
| Series CoolMOS™ |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 Full Pack |
| Supplier Device Package PG-TO220-FP |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 28W (Tc) |
| FET Type N-Channel |
| FET Feature Super Junction |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 10.1A (Tc) |
| Rds On (Max) @ Id, Vgs 650mOhm @ 2.1A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 210µA |
| Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 Full Pack |
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