Infineon Technologies IPB80N06S2H5ATMA2
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- IPB80N06S2H5ATMA2
- Infineon Technologies
- MOSFET N-CH 55V 80A TO263-3
- Transistors - FETs, MOSFETs - Single
- IPB80N06S2H5ATMA2 Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 2910
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPB80N06S2H5ATMA2 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 55V 80A TO263-3 |
| Package Tape & Reel (TR) |
| Series OptiMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package PG-TO263-3-2 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 300W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 55 V |
| Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
| Rds On (Max) @ Id, Vgs 5.2mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id 4V @ 230µA |
| Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IPB80N06S2H5ATMA2 Гарантии
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