Alpha & Omega Semiconductor Inc. AO4312
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- AO4312
- Alpha & Omega Semiconductor Inc.
- MOSFET N-CH 36V 23A 8SOIC
- Transistors - FETs, MOSFETs - Single
- AO4312 Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 3548
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number AO4312 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Alpha & Omega Semiconductor Inc. |
| Description MOSFET N-CH 36V 23A 8SOIC |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package 8-SOIC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 4.2W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 36 V |
| Current - Continuous Drain (Id) @ 25°C 23A (Ta) |
| Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2345 pF @ 18 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-SOIC (0.154\", 3.90mm Width) |
AO4312 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о AO4312 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
AO4312 сопутствующие товары
Комментарии
Alpha & Omega Semiconductor Inc.
AOTF7T60PL
MOSFET N-CH 600V 7A TO220-3F
AOD403
MOSFET N-CH 600V 7A TO220-3F
AO4409
MOSFET N-CH 600V 7A TO220-3F
AON7292
MOSFET N-CH 600V 7A TO220-3F
AOD242
MOSFET N-CH 600V 7A TO220-3F
AOT416
MOSFET N-CH 600V 7A TO220-3F
AOD4S60
MOSFET N-CH 600V 7A TO220-3F
AON6482
MOSFET N-CH 600V 7A TO220-3F
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
