Infineon Technologies FZ800R12KS4B2NOSA1
- FZ800R12KS4B2NOSA1
- Infineon Technologies
- IGBT MOD 1200V 1200A 7600W
- Transistors - IGBTs - Modules
- FZ800R12KS4B2NOSA1 Лист данных
- Module
- Bulk
- Lead free / RoHS Compliant
- 19467
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FZ800R12KS4B2NOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MOD 1200V 1200A 7600W |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 125°C |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 7600 W |
Configuration Single |
Current - Collector (Ic) (Max) 1200 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 5 mA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 800A |
Input Capacitance (Cies) @ Vce 52 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case Module |
FZ800R12KS4B2NOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FZ800R12KS4B2NOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
FF1200R17KE3NOSA1
IGBT MODULE VCES 1700V 1200A
FF450R33T3E3P2BPSA1
IGBT MODULE VCES 1700V 1200A
FZ3600R12HP4PHPSA1
IGBT MODULE VCES 1700V 1200A
FF450R33T3E3P3BPMA1
IGBT MODULE VCES 1700V 1200A
FZ2400R17HP4B2BOSA2
IGBT MODULE VCES 1700V 1200A
FF450R33T3E3P4BPMA1
IGBT MODULE VCES 1700V 1200A
FZ1000R33HL3BPSA1
IGBT MODULE VCES 1700V 1200A
FF450R33T3E3P6BPMA1
IGBT MODULE VCES 1700V 1200A
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i