Infineon Technologies FF200R33KF2CNOSA1
- FF200R33KF2CNOSA1
- Infineon Technologies
- IGBT MOD 3300V 330A 2200W
- Transistors - IGBTs - Modules
- FF200R33KF2CNOSA1 Лист данных
- Module
- Bulk
- Lead free / RoHS Compliant
- 2113
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FF200R33KF2CNOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MOD 3300V 330A 2200W |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 125°C |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 2200 W |
Configuration 2 Independent |
Current - Collector (Ic) (Max) 330 A |
Voltage - Collector Emitter Breakdown (Max) 3300 V |
Current - Collector Cutoff (Max) 5 mA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 4.25V @ 15V, 200A |
Input Capacitance (Cies) @ Vce 25 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case Module |
FF200R33KF2CNOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FF200R33KF2CNOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
FZ2400R17HP4B9HOSA2
IGBT MODULE 1700V 4800A
FZ800R12KS4B2NOSA1
IGBT MODULE 1700V 4800A
FZ2400R17HE4PB9HPSA1
IGBT MODULE 1700V 4800A
FF1200R17KE3NOSA1
IGBT MODULE 1700V 4800A
FF450R33T3E3P2BPSA1
IGBT MODULE 1700V 4800A
FZ3600R12HP4PHPSA1
IGBT MODULE 1700V 4800A
FF450R33T3E3P3BPMA1
IGBT MODULE 1700V 4800A
FZ2400R17HP4B2BOSA2
IGBT MODULE 1700V 4800A
What is a thyristor and what are its advantages?
What is a thyristor and what are its advantages?
What is the working principle of the thyristor?
How to measure the thyristors?
What are the classifications of thyristors?
What is the function of the thyristor?
Advantages of using thyristor
What are the main applications of thyristors?
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Infineon TRENCHSTOP IGBT7 S7
Infineon TRENCHSTOP IGBT7 S7
Infineon Technologies TRENCHSTOP IGBT7 S7 offers a broad 1200V portfolio for all industrial applications requiring short circuit capability/robustness. IGBT7 S7 is a high efficiency short circuit robust discrete IGBT with at least 10% lower saturation voltage than other products.
Infineon IGBT7 S7 offers a very flexible fully rated EC7 diode which significantly reduces the IGBT saturation V CEsat. IGBT7 offers excellent controllability and short-circuit tolerance