Infineon Technologies FZ2400R17HE4B9HOSA2
- FZ2400R17HE4B9HOSA2
- Infineon Technologies
- IGBT MODULE 1700V 2400A
- Transistors - IGBTs - Modules
- FZ2400R17HE4B9HOSA2 Лист данных
- Module
- Bulk
- Lead free / RoHS Compliant
- 3151
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FZ2400R17HE4B9HOSA2 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MODULE 1700V 2400A |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 150°C |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 15500 W |
Configuration Single Switch |
Current - Collector (Ic) (Max) 2400 A |
Voltage - Collector Emitter Breakdown (Max) 1700 V |
Current - Collector Cutoff (Max) 5 mA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 2400A |
Input Capacitance (Cies) @ Vce 195 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case Module |
FZ2400R17HE4B9HOSA2 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FZ2400R17HE4B9HOSA2 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
FZ800R12KS4B2NOSA1
IGBT MOD 1200V 1200A 7600W
FZ2400R17HE4PB9HPSA1
IGBT MOD 1200V 1200A 7600W
FF1200R17KE3NOSA1
IGBT MOD 1200V 1200A 7600W
FF450R33T3E3P2BPSA1
IGBT MOD 1200V 1200A 7600W
FZ3600R12HP4PHPSA1
IGBT MOD 1200V 1200A 7600W
FF450R33T3E3P3BPMA1
IGBT MOD 1200V 1200A 7600W
FZ2400R17HP4B2BOSA2
IGBT MOD 1200V 1200A 7600W
FF450R33T3E3P4BPMA1
IGBT MOD 1200V 1200A 7600W
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i