Infineon Technologies FZ1200R17HP4B2BOSA2
- FZ1200R17HP4B2BOSA2
- Infineon Technologies
- IGBT MOD 1700V 1200A 7800W
- Transistors - IGBTs - Modules
- FZ1200R17HP4B2BOSA2 Лист данных
- Module
- Bulk
- Lead free / RoHS Compliant
- 1719
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FZ1200R17HP4B2BOSA2 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MOD 1700V 1200A 7800W |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 150°C |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 7800 W |
Configuration Half Bridge |
Current - Collector (Ic) (Max) 1200 A |
Voltage - Collector Emitter Breakdown (Max) 1700 V |
Current - Collector Cutoff (Max) 5 mA |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 1200A |
Input Capacitance (Cies) @ Vce 97 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case Module |
FZ1200R17HP4B2BOSA2 Гарантии
• Ответьте оперативно
• Гарантированное качество
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