BSC019N06NSATMA1

Infineon Technologies BSC019N06NSATMA1

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  • BSC019N06NSATMA1
  • Infineon Technologies
  • MOSFET N-CH 60V 100A TDSON-8 FL
  • Transistors - FETs, MOSFETs - Single
  • BSC019N06NSATMA1 Лист данных
  • 8-PowerTDFN
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/BSC019N06NSATMA1Lead free / RoHS Compliant
  • 7267
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
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Part Number
BSC019N06NSATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 100A TDSON-8 FL
Package
Cut Tape (CT)
Series
OptiMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8 FL
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
136W (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Rds On (Max) @ Id, Vgs
1.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.3V @ 74µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5250 pF @ 30 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package_case
8-PowerTDFN

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