SIRA99DP-T1-GE3

Vishay Siliconix SIRA99DP-T1-GE3

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  • SIRA99DP-T1-GE3
  • Vishay Siliconix
  • MOSFET P-CH 30V 47.9A/195A PPAK
  • Transistors - FETs, MOSFETs - Single
  • SIRA99DP-T1-GE3 Лист данных
  • PowerPAK® SO-8
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/SIRA99DP-T1-GE3Lead free / RoHS Compliant
  • 6175
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
SIRA99DP-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 30V 47.9A/195A PPAK
Package
Cut Tape (CT)
Series
TrenchFET® Gen IV
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
6.35W (Ta), 104W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
47.9A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs
1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
10955 pF @ 15 V
Vgs (Max)
+16V, -20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
PowerPAK® SO-8

SIRA99DP-T1-GE3 Гарантии

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