Infineon Technologies IPB60R180P7ATMA1
- IPB60R180P7ATMA1
- Infineon Technologies
- MOSFET N-CH 600V 18A D2PAK
- Transistors - FETs, MOSFETs - Single
- IPB60R180P7ATMA1 Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 29862
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IPB60R180P7ATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 600V 18A D2PAK |
Package Tape & Reel (TR) |
Series CoolMOS™ P7 |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package PG-TO263-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 72W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 18A (Tc) |
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id 4V @ 280µA |
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IPB60R180P7ATMA1 Гарантии
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