Infineon Technologies AUIRF7341QTR
- AUIRF7341QTR
- Infineon Technologies
- MOSFET 2N-CH 55V 5.1A 8SOIC
- Transistors - FETs, MOSFETs - Arrays
- AUIRF7341QTR Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 4450
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number AUIRF7341QTR |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Infineon Technologies |
Description MOSFET 2N-CH 55V 5.1A 8SOIC |
Package Jinftry-Reel® |
Series Automotive, AEC-Q101, HEXFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Power - Max 2.4W |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 55V |
Current - Continuous Drain (Id) @ 25°C 5.1A |
Rds On (Max) @ Id, Vgs 50mOhm @ 5.1A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
AUIRF7341QTR Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о AUIRF7341QTR ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
BSC0911NDATMA1
MOSFET 2N-CH 25V 18A/30A TISON8
IPG20N04S4L07ATMA1
MOSFET 2N-CH 25V 18A/30A TISON8
BSO303P H
MOSFET 2N-CH 25V 18A/30A TISON8
AUIRF7313QTR
MOSFET 2N-CH 25V 18A/30A TISON8
IPG20N06S415AATMA1
MOSFET 2N-CH 25V 18A/30A TISON8
FF23MR12W1M1B11BOMA1
MOSFET 2N-CH 25V 18A/30A TISON8
IRF7328TRPBF
MOSFET 2N-CH 25V 18A/30A TISON8
IRF7507TRPBF
MOSFET 2N-CH 25V 18A/30A TISON8
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
Infineon Technologies-Gate driver reinforced isolation
HV driver with 6kV isolation in a SO-8W package
Flip chip package increases power density
200V half-bridge driver in SOIC-8 package
Fluence and Northvolt to co-develop battery technology for
Grid-scale energy storage
Global consortium for power system operators and research institutes
Addionics, Saint-Gobain Ceramics team on solid state battery tech
Lead perovskite boosts solar cell efficiency over 25 percent
200kW SiC inverter hits 99 percent efficiency