AUIRF7313QTR

Infineon Technologies AUIRF7313QTR

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • AUIRF7313QTR
  • Infineon Technologies
  • MOSFET 2N-CH 30V 6.9A 8SO
  • Transistors - FETs, MOSFETs - Arrays
  • AUIRF7313QTR Лист данных
  • 8-SOIC (0.154\", 3.90mm Width)
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/AUIRF7313QTRLead free / RoHS Compliant
  • 1996
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
AUIRF7313QTR
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 30V 6.9A 8SO
Package
Tape & Reel (TR)
Series
HEXFET®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package
8-SOIC
Power - Max
2.4W
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6.9A
Rds On (Max) @ Id, Vgs
29mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
755pF @ 25V
Package_case
8-SOIC (0.154\", 3.90mm Width)

AUIRF7313QTR Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/AUIRF7313QTR

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/AUIRF7313QTR

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/AUIRF7313QTR

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о AUIRF7313QTR ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/AUIRF7313QTR
FF23MR12W1M1B11BOMA1,https://www.jinftry.ru/product_detail/AUIRF7313QTR
FF23MR12W1M1B11BOMA1

MOSFET 2 N-CH 1200V 50A MODULE

IRF7328TRPBF,https://www.jinftry.ru/product_detail/AUIRF7313QTR
IRF7328TRPBF

MOSFET 2 N-CH 1200V 50A MODULE

IRF7507TRPBF,https://www.jinftry.ru/product_detail/AUIRF7313QTR
IRF7507TRPBF

MOSFET 2 N-CH 1200V 50A MODULE

IRF7309TRPBF,https://www.jinftry.ru/product_detail/AUIRF7313QTR
IRF7309TRPBF

MOSFET 2 N-CH 1200V 50A MODULE

2N7002DWH6327XTSA1,https://www.jinftry.ru/product_detail/AUIRF7313QTR
2N7002DWH6327XTSA1

MOSFET 2 N-CH 1200V 50A MODULE

IRF9358TRPBF,https://www.jinftry.ru/product_detail/AUIRF7313QTR
IRF9358TRPBF

MOSFET 2 N-CH 1200V 50A MODULE

IRF9362TRPBF,https://www.jinftry.ru/product_detail/AUIRF7313QTR
IRF9362TRPBF

MOSFET 2 N-CH 1200V 50A MODULE

IRF7343TRPBF,https://www.jinftry.ru/product_detail/AUIRF7313QTR
IRF7343TRPBF

MOSFET 2 N-CH 1200V 50A MODULE

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

Power Management ICs: definition, important models, and application fields

First of all, what is power management ICS? A power management ICS is an integrated circuit used to monitor and control the power system in electronic equipment. It plays a critical role in ensuring that equipment operates efficiently and reliably, and provides proper power management.

Infineon BTG7090-2EPL PROFET Load Protection

Infineon BTG7090-2EPL PROFET Load Protection Infineon Technologies BTG7090-2EPL PROFET Load Guard is an intelligent high-side power switch that provides protection features and enhanced diagnostics. The BTG7090-2EPL PROFET is equipped with an adjustable overcurrent limit to provide high reliability to protect the system. This feature ensures that PCB traces, connectors and loads are protected in the event of a short to ground. The BTG7090-2EPL PROFET also features a capacitive load switch mode
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP