Infineon Technologies AUIRF7313QTR
- AUIRF7313QTR
- Infineon Technologies
- MOSFET 2N-CH 30V 6.9A 8SO
- Transistors - FETs, MOSFETs - Arrays
- AUIRF7313QTR Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 1996
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number AUIRF7313QTR |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Infineon Technologies |
Description MOSFET 2N-CH 30V 6.9A 8SO |
Package Tape & Reel (TR) |
Series HEXFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Power - Max 2.4W |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 30V |
Current - Continuous Drain (Id) @ 25°C 6.9A |
Rds On (Max) @ Id, Vgs 29mOhm @ 6.9A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 755pF @ 25V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
AUIRF7313QTR Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о AUIRF7313QTR ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
FF23MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 50A MODULE
IRF7328TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
IRF7507TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
IRF7309TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
2N7002DWH6327XTSA1
MOSFET 2 N-CH 1200V 50A MODULE
IRF9358TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
IRF9362TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
IRF7343TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Power Management ICs: definition, important models, and application fields
First of all, what is power management ICS? A power management ICS is an integrated circuit used to monitor and control the power system in electronic equipment. It plays a critical role in ensuring that equipment operates efficiently and reliably, and provides proper power management.
Infineon BTG7090-2EPL PROFET Load Protection
Infineon BTG7090-2EPL PROFET Load Protection
Infineon Technologies BTG7090-2EPL PROFET Load Guard is an intelligent high-side power switch that provides protection features and enhanced diagnostics. The BTG7090-2EPL PROFET is equipped with an adjustable overcurrent limit to provide high reliability to protect the system. This feature ensures that PCB traces, connectors and loads are protected in the event of a short to ground. The BTG7090-2EPL PROFET also features a capacitive load switch mode