Infineon Technologies IPG20N06S415AATMA1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IPG20N06S415AATMA1
- Infineon Technologies
- MOSFET 2N-CH 60V 20A 8TDSON
- Transistors - FETs, MOSFETs - Arrays
- IPG20N06S415AATMA1 Лист данных
- 8-PowerVDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 12736
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IPG20N06S415AATMA1 |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer Infineon Technologies |
| Description MOSFET 2N-CH 60V 20A 8TDSON |
| Package Tape & Reel (TR) |
| Series Automotive, AEC-Q101, OptiMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount, Wettable Flank |
| Package / Case 8-PowerVDFN |
| Supplier Device Package PG-TDSON-8-10 |
| Power - Max 50W |
| FET Type 2 N-Channel (Dual) |
| FET Feature Standard |
| Drain to Source Voltage (Vdss) 60V |
| Current - Continuous Drain (Id) @ 25°C 20A |
| Rds On (Max) @ Id, Vgs 15.5mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id 4V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 25V |
| Package_case 8-PowerVDFN |
IPG20N06S415AATMA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IPG20N06S415AATMA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IPG20N06S415AATMA1 сопутствующие товары
Комментарии
Infineon Technologies
FF23MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 50A MODULE
IRF7328TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
IRF7507TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
IRF7309TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
2N7002DWH6327XTSA1
MOSFET 2 N-CH 1200V 50A MODULE
IRF9358TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
IRF9362TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
IRF7343TRPBF
MOSFET 2 N-CH 1200V 50A MODULE
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
