Microsemi Corporation 1N5552US
- 1N5552US
- Microsemi Corporation
- DIODE GEN PURP 600V 3A D5B
- Diodes - Rectifiers - Single
- 1N5552US Лист данных
- SQ-MELF, B
- SQ-MELF, B
- Lead free / RoHS Compliant
- 1265
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1N5552US |
Category Diodes - Rectifiers - Single |
Manufacturer Microsemi Corporation |
Description DIODE GEN PURP 600V 3A D5B |
Package SQ-MELF, B |
Series - |
Mounting Type Surface Mount |
Package / Case SQ-MELF, B |
Supplier Device Package D-5B |
Diode Type Standard |
Current - Average Rectified (Io) 3A |
Voltage - Forward (Vf) (Max) @ If 1.2V @ 9A |
Current - Reverse Leakage @ Vr 1µA @ 600V |
Voltage - DC Reverse (Vr) (Max) 600V |
Speed Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) 2µs |
Operating Temperature - Junction -65°C ~ 175°C |
Package_case SQ-MELF, B |
1N5552US Гарантии
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Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
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