GB05SLT12-220

GeneSiC Semiconductor GB05SLT12-220

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • GB05SLT12-220
  • GeneSiC Semiconductor
  • DIODE SCHOTTKY 1.2KV 5A TO220AC
  • Diodes - Rectifiers - Single
  • GB05SLT12-220 Лист данных
  • TO-220-2
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/GB05SLT12-220Lead free / RoHS Compliant
  • 939
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
GB05SLT12-220
Category
Diodes - Rectifiers - Single
Manufacturer
GeneSiC Semiconductor
Description
DIODE SCHOTTKY 1.2KV 5A TO220AC
Package
Tube
Series
-
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2
Diode Type
Silicon Carbide Schottky
Current - Average Rectified (Io)
5A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 2 A
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Capacitance @ Vr, F
260pF @ 1V, 1MHz
Voltage - DC Reverse (Vr) (Max)
1200 V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Operating Temperature - Junction
-55°C ~ 175°C
Package_case
TO-220-2

GB05SLT12-220 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/GB05SLT12-220

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/GB05SLT12-220

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/GB05SLT12-220

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о GB05SLT12-220 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

GeneSiC Semiconductor

GB01SLT12-214,https://www.jinftry.ru/product_detail/GB05SLT12-220
GB01SLT12-214

DIODE SCHOTTKY 1.2KV 2.5A SMB

GB01SLT06-214,https://www.jinftry.ru/product_detail/GB05SLT12-220
GB01SLT06-214

DIODE SCHOTTKY 1.2KV 2.5A SMB

GB02SLT12-214,https://www.jinftry.ru/product_detail/GB05SLT12-220
GB02SLT12-214

DIODE SCHOTTKY 1.2KV 2.5A SMB

S380Y,https://www.jinftry.ru/product_detail/GB05SLT12-220
S380Y

DIODE SCHOTTKY 1.2KV 2.5A SMB

GB01SLT12-252,https://www.jinftry.ru/product_detail/GB05SLT12-220
GB01SLT12-252

DIODE SCHOTTKY 1.2KV 2.5A SMB

GB02SLT12-252,https://www.jinftry.ru/product_detail/GB05SLT12-220
GB02SLT12-252

DIODE SCHOTTKY 1.2KV 2.5A SMB

GB50SLT12-247,https://www.jinftry.ru/product_detail/GB05SLT12-220
GB50SLT12-247

DIODE SCHOTTKY 1.2KV 2.5A SMB

1N6095R,https://www.jinftry.ru/product_detail/GB05SLT12-220
1N6095R

DIODE SCHOTTKY 1.2KV 2.5A SMB

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP