Microchip Technology 1N6625US
- 1N6625US
- Microchip Technology
- DIODE GEN PURP 1.1KV 1A A-MELF
- Diodes - Rectifiers - Single
- 1N6625US Лист данных
- SQ-MELF, A
- Bulk
- Lead free / RoHS Compliant
- 28592
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1N6625US |
Category Diodes - Rectifiers - Single |
Manufacturer Microchip Technology |
Description DIODE GEN PURP 1.1KV 1A A-MELF |
Package Bulk |
Series - |
Mounting Type Surface Mount |
Package / Case SQ-MELF, A |
Supplier Device Package A-MELF |
Diode Type Standard |
Current - Average Rectified (Io) 1A |
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 1 A |
Current - Reverse Leakage @ Vr 1 µA @ 1100 V |
Capacitance @ Vr, F 10pF @ 10V, 1MHz |
Voltage - DC Reverse (Vr) (Max) 1100 V |
Speed Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) 60 ns |
Operating Temperature - Junction -65°C ~ 150°C |
Package_case SQ-MELF, A |
1N6625US Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1N6625US ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microchip Technology
1N5419E3
DIODE GEN PURP 500V 3A AXIAL
JANTX1N3164
DIODE GEN PURP 500V 3A AXIAL
JAN1N3174
DIODE GEN PURP 500V 3A AXIAL
JANTX1N3289
DIODE GEN PURP 500V 3A AXIAL
JANTX1N3890
DIODE GEN PURP 500V 3A AXIAL
JANTXV1N6492
DIODE GEN PURP 500V 3A AXIAL
JANTX1N6761-1
DIODE GEN PURP 500V 3A AXIAL
CDS5711UR-1
DIODE GEN PURP 500V 3A AXIAL
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4