XPW6R30ANB,L1XHQ

Toshiba Semiconductor and Storage XPW6R30ANB,L1XHQ

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  • XPW6R30ANB,L1XHQ
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 100V 45A 8DSOP
  • Transistors - FETs, MOSFETs - Single
  • XPW6R30ANB,L1XHQ Лист данных
  • 8-PowerVDFN
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/XPW6R30ANB-L1XHQLead free / RoHS Compliant
  • 4519
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
XPW6R30ANB,L1XHQ
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 100V 45A 8DSOP
Package
Tape & Reel (TR)
Series
U-MOSVIII-H
Operating Temperature
175°C
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-DSOP Advance
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
960mW (Ta), 132W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
45A (Ta)
Rds On (Max) @ Id, Vgs
6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package_case
8-PowerVDFN

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