Harris Corporation RF1S630SM
- RF1S630SM
- Harris Corporation
- N-CHANNEL POWER MOSFET
- Transistors - FETs, MOSFETs - Single
- RF1S630SM Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 2945
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number RF1S630SM |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Harris Corporation |
Description N-CHANNEL POWER MOSFET |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Technology - |
Power Dissipation (Max) - |
FET Type - |
FET Feature - |
Drain to Source Voltage (Vdss) - |
Current - Continuous Drain (Id) @ 25°C - |
Rds On (Max) @ Id, Vgs - |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case - |
RF1S630SM Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
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