VS-1N1190R

Vishay Semiconductor - Diodes Division VS-1N1190R

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • VS-1N1190R
  • Vishay Semiconductor - Diodes Division
  • DIODE GEN PURP 600V 35A DO203AB
  • Diodes - Rectifiers - Single
  • VS-1N1190R Лист данных
  • DO-203AB, DO-5, Stud
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/VS-1N1190RLead free / RoHS Compliant
  • 4347
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
VS-1N1190R
Category
Diodes - Rectifiers - Single
Manufacturer
Vishay Semiconductor - Diodes Division
Description
DIODE GEN PURP 600V 35A DO203AB
Package
Bulk
Series
-
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AB, DO-5, Stud
Supplier Device Package
DO-203AB (DO-5)
Diode Type
Standard, Reverse Polarity
Current - Average Rectified (Io)
35A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 110 A
Current - Reverse Leakage @ Vr
10 mA @ 600 V
Capacitance @ Vr, F
-
Voltage - DC Reverse (Vr) (Max)
600 V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-65°C ~ 190°C
Package_case
DO-203AB, DO-5, Stud

VS-1N1190R Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/VS-1N1190R

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/VS-1N1190R

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/VS-1N1190R

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о VS-1N1190R ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division,https://www.jinftry.ru/product_detail/VS-1N1190R
VS-1N1188,https://www.jinftry.ru/product_detail/VS-1N1190R
VS-1N1188

DIODE GEN PURP 400V 35A DO203AB

VS-1N1187A,https://www.jinftry.ru/product_detail/VS-1N1190R
VS-1N1187A

DIODE GEN PURP 400V 35A DO203AB

VS-1N3891,https://www.jinftry.ru/product_detail/VS-1N1190R
VS-1N3891

DIODE GEN PURP 400V 35A DO203AB

VS-12F60,https://www.jinftry.ru/product_detail/VS-1N1190R
VS-12F60

DIODE GEN PURP 400V 35A DO203AB

VS-1N1204A,https://www.jinftry.ru/product_detail/VS-1N1190R
VS-1N1204A

DIODE GEN PURP 400V 35A DO203AB

VS-1N3891R,https://www.jinftry.ru/product_detail/VS-1N1190R
VS-1N3891R

DIODE GEN PURP 400V 35A DO203AB

VS-1N1199A,https://www.jinftry.ru/product_detail/VS-1N1190R
VS-1N1199A

DIODE GEN PURP 400V 35A DO203AB

VS-6F60,https://www.jinftry.ru/product_detail/VS-1N1190R
VS-6F60

DIODE GEN PURP 400V 35A DO203AB

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP