Vishay Semiconductor - Diodes Division VS-12F60
- VS-12F60
- Vishay Semiconductor - Diodes Division
- DIODE GEN PURP 600V 12A DO203AA
- Diodes - Rectifiers - Single
- VS-12F60 Лист данных
- DO-203AA, DO-4, Stud
- Bulk
- Lead free / RoHS Compliant
- 3766
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number VS-12F60 |
Category Diodes - Rectifiers - Single |
Manufacturer Vishay Semiconductor - Diodes Division |
Description DIODE GEN PURP 600V 12A DO203AA |
Package Bulk |
Series - |
Mounting Type Chassis, Stud Mount |
Package / Case DO-203AA, DO-4, Stud |
Supplier Device Package DO-203AA (DO-4) |
Diode Type Standard |
Current - Average Rectified (Io) 12A |
Voltage - Forward (Vf) (Max) @ If 1.26 V @ 38 A |
Current - Reverse Leakage @ Vr 12 mA @ 600 V |
Capacitance @ Vr, F - |
Voltage - DC Reverse (Vr) (Max) 600 V |
Speed Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction -65°C ~ 175°C |
Package_case DO-203AA, DO-4, Stud |
VS-12F60 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о VS-12F60 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Semiconductor - Diodes Division
VS-1N3891R
DIODE GEN PURP 200V 12A DO203AA
VS-1N1199A
DIODE GEN PURP 200V 12A DO203AA
VS-6F60
DIODE GEN PURP 200V 12A DO203AA
VS-EPU6006-N3
DIODE GEN PURP 200V 12A DO203AA
VS-1N1202RA
DIODE GEN PURP 200V 12A DO203AA
VS-8TQ060-N3
DIODE GEN PURP 200V 12A DO203AA
VS-8TQ100-N3
DIODE GEN PURP 200V 12A DO203AA
VS-150K20A
DIODE GEN PURP 200V 12A DO203AA
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications: