Renesas Electronics America Inc UPA1764G-E2-AZ
- UPA1764G-E2-AZ
- Renesas Electronics America Inc
- MOSFET 2N-CH 60V 7A 8-SOIC
- Transistors - FETs, MOSFETs - Arrays
- UPA1764G-E2-AZ Лист данных
- 8-SOIC (0.173\", 4.40mm Width)
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3907
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number UPA1764G-E2-AZ |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Renesas Electronics America Inc |
Description MOSFET 2N-CH 60V 7A 8-SOIC |
Package Tape & Reel (TR) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.173\", 4.40mm Width) |
Supplier Device Package 8-SOP |
Power - Max 2W |
FET Type 2 N-Channel (Dual) |
FET Feature Standard |
Drain to Source Voltage (Vdss) 60V |
Current - Continuous Drain (Id) @ 25°C 7A |
Rds On (Max) @ Id, Vgs 35mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V |
Package_case 8-SOIC (0.173\", 4.40mm Width) |
UPA1764G-E2-AZ Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о UPA1764G-E2-AZ ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Renesas Electronics America Inc
RJM0603JSC-00#12
MOSFET 3N/3P-CH 60V 20A HSOP
RJM0603JSC-00#13
MOSFET 3N/3P-CH 60V 20A HSOP
GWS9294
MOSFET 3N/3P-CH 60V 20A HSOP
GWS9293
MOSFET 3N/3P-CH 60V 20A HSOP
UPA2379T1P-E1-A
MOSFET 3N/3P-CH 60V 20A HSOP
UPA2375T1P-E1-A
MOSFET 3N/3P-CH 60V 20A HSOP
UPA2660T1R-E2-AX
MOSFET 3N/3P-CH 60V 20A HSOP
UPA2690T1R-E2-AX
MOSFET 3N/3P-CH 60V 20A HSOP
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Renesas Electronics and Texas Instruments compete on Bluetooth LE
Renesas Electronics and Texas Instruments compete on Bluetooth LE
Renesas Electronics and Texas Instruments (TI) have both launched Bluetooth wireless microcontrollers for the Internet of Things (IoT), wearables and medical designs, and the two companies are officially competing over Bluetooth LE.
According to eeNews, TI introduced the CC2340 series of fourth-generation Bluetooth low energy (BLE) wireless microcontrollers, while Renesas introduced the SmartBondDA1470x series of dual-core