ON Semiconductor MCH6606-TL-E
- MCH6606-TL-E
- ON Semiconductor
- MCH6606 - MOSFET
- Transistors - FETs, MOSFETs - Arrays
- MCH6606-TL-E Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 2428
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number MCH6606-TL-E |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer ON Semiconductor |
Description MCH6606 - MOSFET |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Technology - |
Power Dissipation (Max) - |
FET Type - |
FET Feature - |
Drain to Source Voltage (Vdss) - |
Current - Continuous Drain (Id) @ 25°C - |
Rds On (Max) @ Id, Vgs - |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case - |
MCH6606-TL-E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MCH6606-TL-E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
ECH8601M-TL-H
MOSFET N-CH 24V 8A ECH8
FW276-TL-2H
MOSFET N-CH 24V 8A ECH8
FDC6301N_G
MOSFET N-CH 24V 8A ECH8
FDS8958B_G
MOSFET N-CH 24V 8A ECH8
FDS6986AS_SN00192
MOSFET N-CH 24V 8A ECH8
FDS6982AS_G
MOSFET N-CH 24V 8A ECH8
FDMC8298
MOSFET N-CH 24V 8A ECH8
EFC8822R-X-TF
MOSFET N-CH 24V 8A ECH8
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor, a leader in semiconductors for smart power and sensing technologies, recently launched the 1200V SPM31 Intelligent Power Module (IPM) using new seventh-generation insulated gate bipolar transistor (IGBT) technology. The SPM31 IPM excels in energy efficiency, size and power density compared to other leading solutions on the market, reducing overall system cost. These IPMs integrate
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
onsemi NCID9210 two-way ceramic digital isolator-onsemi
onsemi NCID9210 two-way ceramic digital isolator-onsemi
ON Semiconductor NCID9210 bidirectional ceramic digital isolator is an electrically isolated full-duplex, bidirectional, high-speed dual-channel digital isolator in a 16-pin wide-body small-outline package.
NCID9210 supports isolated communication and transmits digital signals between systems without conducting ground loops and harmful voltages.
The NCID9210 bidirectional ceramic digital isolator adopts patented current off-chip capa