TPN4R203NC,L1Q

Toshiba Semiconductor and Storage TPN4R203NC,L1Q

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • TPN4R203NC,L1Q
  • Toshiba Semiconductor and Storage
  • MOSFET N CH 30V 23A 8TSON-ADV
  • Transistors - FETs, MOSFETs - Single
  • TPN4R203NC,L1Q Лист данных
  • 8-PowerVDFN
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/TPN4R203NC-L1QLead free / RoHS Compliant
  • 14603
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
TPN4R203NC,L1Q
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N CH 30V 23A 8TSON-ADV
Package
Cut Tape (CT)
Series
U-MOSVIII
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-TSON Advance (3.1x3.1)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
700mW (Ta), 22W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerVDFN

TPN4R203NC,L1Q Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о TPN4R203NC,L1Q ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q
TK50P04M1(T6RSS-Q),https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q
TK50P04M1(T6RSS-Q)

MOSFET N-CH 40V 50A DP

TPN7R506NH,L1Q,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q
TPN7R506NH,L1Q

MOSFET N-CH 40V 50A DP

TPH4R606NH,L1Q,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q
TPH4R606NH,L1Q

MOSFET N-CH 40V 50A DP

TPH5R906NH,L1Q,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q
TPH5R906NH,L1Q

MOSFET N-CH 40V 50A DP

SSM3K56CT,L3F,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q
SSM3K56CT,L3F

MOSFET N-CH 40V 50A DP

SSM3K56ACT,L3F,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q
SSM3K56ACT,L3F

MOSFET N-CH 40V 50A DP

SSM3K7002KF,LF,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q
SSM3K7002KF,LF

MOSFET N-CH 40V 50A DP

SSM3K72CTC,L3F,https://www.jinftry.ru/product_detail/TPN4R203NC-L1Q
SSM3K72CTC,L3F

MOSFET N-CH 40V 50A DP

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

What is a bipolar transistor and what is its operating mode

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

Toshiba TLP5222 gate driver

Toshiba TLP5222 gate driver Toshiba TLP5222 Gate Driver Optocouplers provide a highly integrated, versatile, 2.5A output current gate driver in a long creepage and gap SO16L package. The TLP5222 includes functions such as desaturation detection, isolated fault status feedback, soft gate shutdown, active Miller clamp, undervoltage lockout and automatic fault status reset. Toshiba TLP5222 gate driver optocoupler integrates two infrared light emitting diodes (LEDs) and two high gain high speed
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP