Infineon Technologies IRFR4105ZTRPBF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IRFR4105ZTRPBF
- Infineon Technologies
- MOSFET N-CH 55V 30A DPAK
- Transistors - FETs, MOSFETs - Single
- IRFR4105ZTRPBF Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 4633
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IRFR4105ZTRPBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 55V 30A DPAK |
| Package Tape & Reel (TR) |
| Series HEXFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package D-Pak |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 48W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 55 V |
| Current - Continuous Drain (Id) @ 25°C 30A (Tc) |
| Rds On (Max) @ Id, Vgs 24.5mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IRFR4105ZTRPBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRFR4105ZTRPBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IRFR4105ZTRPBF сопутствующие товары
Комментарии
Infineon Technologies
BSZ035N03MS G
MOSFET N-CH 30V 40A TSDSON-8
BSC084P03NS3 G
MOSFET N-CH 30V 40A TSDSON-8
IPB065N03L G
MOSFET N-CH 30V 40A TSDSON-8
IRFR825TRPBF
MOSFET N-CH 30V 40A TSDSON-8
IRFR3303TRPBF
MOSFET N-CH 30V 40A TSDSON-8
IRF7402TRPBF
MOSFET N-CH 30V 40A TSDSON-8
BSC024NE2LS
MOSFET N-CH 30V 40A TSDSON-8
IRLR8721TRPBF
MOSFET N-CH 30V 40A TSDSON-8
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
Infineon TRENCHSTOP IGBT7 S7
Infineon TRENCHSTOP IGBT7 S7
Infineon Technologies TRENCHSTOP IGBT7 S7 offers a broad 1200V portfolio for all industrial applications requiring short circuit capability/robustness. IGBT7 S7 is a high efficiency short circuit robust discrete IGBT with at least 10% lower saturation voltage than other products.
Infineon IGBT7 S7 offers a very flexible fully rated EC7 diode which significantly reduces the IGBT saturation V CEsat. IGBT7 offers excellent controllability and short-circuit tolerance
Infineon Technologies-Gate driver reinforced isolation
HV driver with 6kV isolation in a SO-8W package
Flip chip package increases power density
200V half-bridge driver in SOIC-8 package
Fluence and Northvolt to co-develop battery technology for
Grid-scale energy storage
Global consortium for power system operators and research institutes
Addionics, Saint-Gobain Ceramics team on solid state battery tech
Lead perovskite boosts solar cell efficiency over 25 percent
200kW SiC inverter hits 99 percent efficiency
