Toshiba Semiconductor and Storage TK35N65W,S1F
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- TK35N65W,S1F
- Toshiba Semiconductor and Storage
- MOSFET N-CH 650V 35A TO247
- Transistors - FETs, MOSFETs - Single
- TK35N65W,S1F Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 16096
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number TK35N65W,S1F |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 650V 35A TO247 |
| Package Tube |
| Series DTMOSIV |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 270W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 35A (Ta) |
| Rds On (Max) @ Id, Vgs 80mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 2.1mA |
| Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
TK35N65W,S1F Гарантии
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