Toshiba Semiconductor and Storage TK31V60X,LQ
- TK31V60X,LQ
- Toshiba Semiconductor and Storage
- MOSFET N-CH 600V 30.8A 4DFN
- Transistors - FETs, MOSFETs - Single
- TK31V60X,LQ Лист данных
- 4-VSFN Exposed Pad
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4978
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number TK31V60X,LQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 600V 30.8A 4DFN |
Package Cut Tape (CT) |
Series DTMOSIV-H |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 4-VSFN Exposed Pad |
Supplier Device Package 4-DFN-EP (8x8) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 240W (Tc) |
FET Type N-Channel |
FET Feature Super Junction |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) |
Rds On (Max) @ Id, Vgs 98mOhm @ 9.4A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case 4-VSFN Exposed Pad |
TK31V60X,LQ Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
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