STIPN2M50T-H

STMicroelectronics STIPN2M50T-H

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • STIPN2M50T-H
  • STMicroelectronics
  • POWER DRVR MOD 500V 2A 26DIP MOD
  • Power Driver Modules
  • STIPN2M50T-H Лист данных
  • 26-PowerDIP Module (0.846\", 21.48mm)
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/STIPN2M50T-HLead free / RoHS Compliant
  • 4422
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
STIPN2M50T-H
Category
Power Driver Modules
Manufacturer
STMicroelectronics
Description
POWER DRVR MOD 500V 2A 26DIP MOD
Package
Cut Tape (CT)
Series
SLLIMM™
Type
MOSFET
Mounting Type
Through Hole
Package / Case
26-PowerDIP Module (0.846\", 21.48mm)
Configuration
3 Phase Inverter
Current
2 A
Voltage
500 V
Voltage - Isolation
1000Vrms
Package_case
26-PowerDIP Module (0.846\", 21.48mm)

STIPN2M50T-H Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/STIPN2M50T-H

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/STIPN2M50T-H

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/STIPN2M50T-H

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о STIPN2M50T-H ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

STMicroelectronics
STMicroelectronics,https://www.jinftry.ru/product_detail/STIPN2M50T-H
STGIPS20C60T-H,https://www.jinftry.ru/product_detail/STIPN2M50T-H
STGIPS20C60T-H

MOD IPM SLLIMM 3PHASE 25SDIP

STGIPS15C60-H,https://www.jinftry.ru/product_detail/STIPN2M50T-H
STGIPS15C60-H

MOD IPM SLLIMM 3PHASE 25SDIP

STGIPS10C60-H,https://www.jinftry.ru/product_detail/STIPN2M50T-H
STGIPS10C60-H

MOD IPM SLLIMM 3PHASE 25SDIP

STGIPS30C60-H,https://www.jinftry.ru/product_detail/STIPN2M50T-H
STGIPS30C60-H

MOD IPM SLLIMM 3PHASE 25SDIP

STGIPS30C60T-H,https://www.jinftry.ru/product_detail/STIPN2M50T-H
STGIPS30C60T-H

MOD IPM SLLIMM 3PHASE 25SDIP

STGIPS10K60A,https://www.jinftry.ru/product_detail/STIPN2M50T-H
STGIPS10K60A

MOD IPM SLLIMM 3PHASE 25SDIP

STGIPN3H60,https://www.jinftry.ru/product_detail/STIPN2M50T-H
STGIPN3H60

MOD IPM SLLIMM 3PHASE 25SDIP

STGIPS20K60,https://www.jinftry.ru/product_detail/STIPN2M50T-H
STGIPS20K60

MOD IPM SLLIMM 3PHASE 25SDIP

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

Three-Phase SiC Gate Driver Silicon Carbide Applications

Three-Phase SiC Gate Driver Silicon Carbide Applications The design of the CXT-PLA3SA12450AA three-phase gate driver is derived from the fully tested and verified CMT-TIT8243 [1, 2] and CMT-TIT0697 [3] single-phase gate driver boards, respectively designed for 62mm 1200V/300A and Fast switching XM3 1200V/450A SiC MOSFET power module (see Figure 4). The three-phase gate driver is optimized to be mounted directly on top of the CXTPLA3SA12450 power module, thanks to a more compact transformer de

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP