FSB50660SF

ON Semiconductor FSB50660SF

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FSB50660SF
  • ON Semiconductor
  • MODULE SPM 600V 3.1A 23PWRDIP
  • Power Driver Modules
  • FSB50660SF Лист данных
  • 23-PowerDIP Module (0.573\", 14.56mm)
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FSB50660SFLead free / RoHS Compliant
  • 23943
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FSB50660SF
Category
Power Driver Modules
Manufacturer
ON Semiconductor
Description
MODULE SPM 600V 3.1A 23PWRDIP
Package
Tube
Series
Motion SPM® 5 SuperFET®
Type
MOSFET
Mounting Type
Through Hole
Package / Case
23-PowerDIP Module (0.573\", 14.56mm)
Configuration
3 Phase
Current
3.1 A
Voltage
600 V
Voltage - Isolation
1500Vrms
Package_case
23-PowerDIP Module (0.573\", 14.56mm)

FSB50660SF Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FSB50660SF

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FSB50660SF

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FSB50660SF

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FSB50660SF ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

ON Semiconductor
ON Semiconductor,https://www.jinftry.ru/product_detail/FSB50660SF
FSB50450BS,https://www.jinftry.ru/product_detail/FSB50660SF
FSB50450BS

POWER DRVR MOD 500V 2.2A 23SMD

FPDB30PH60,https://www.jinftry.ru/product_detail/FSB50660SF
FPDB30PH60

POWER DRVR MOD 500V 2.2A 23SMD

FSAM20SH60A,https://www.jinftry.ru/product_detail/FSB50660SF
FSAM20SH60A

POWER DRVR MOD 500V 2.2A 23SMD

FSBB20CH120DF,https://www.jinftry.ru/product_detail/FSB50660SF
FSBB20CH120DF

POWER DRVR MOD 500V 2.2A 23SMD

FSBB15CH120DF,https://www.jinftry.ru/product_detail/FSB50660SF
FSBB15CH120DF

POWER DRVR MOD 500V 2.2A 23SMD

FSBB20CH60L,https://www.jinftry.ru/product_detail/FSB50660SF
FSBB20CH60L

POWER DRVR MOD 500V 2.2A 23SMD

FSB32560,https://www.jinftry.ru/product_detail/FSB50660SF
FSB32560

POWER DRVR MOD 500V 2.2A 23SMD

FTCO3V85A1,https://www.jinftry.ru/product_detail/FSB50660SF
FTCO3V85A1

POWER DRVR MOD 500V 2.2A 23SMD

ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance

ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance ON Semiconductor, a leader in semiconductors for smart power and sensing technologies, recently launched the 1200V SPM31 Intelligent Power Module (IPM) using new seventh-generation insulated gate bipolar transistor (IGBT) technology. The SPM31 IPM excels in energy efficiency, size and power density compared to other leading solutions on the market, reducing overall system cost. These IPMs integrate

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP