Vishay Siliconix SI4925BDY-T1-GE3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- SI4925BDY-T1-GE3
- Vishay Siliconix
- MOSFET 2P-CH 30V 5.3A 8-SOIC
- Transistors - FETs, MOSFETs - Arrays
- SI4925BDY-T1-GE3 Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 4288
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number SI4925BDY-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer Vishay Siliconix |
| Description MOSFET 2P-CH 30V 5.3A 8-SOIC |
| Package Tape & Reel (TR) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package 8-SOIC |
| Power - Max 1.1W |
| FET Type 2 P-Channel (Dual) |
| FET Feature Logic Level Gate |
| Drain to Source Voltage (Vdss) 30V |
| Current - Continuous Drain (Id) @ 25°C 5.3A |
| Rds On (Max) @ Id, Vgs 25mOhm @ 7.1A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds - |
| Package_case 8-SOIC (0.154\", 3.90mm Width) |
SI4925BDY-T1-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SI4925BDY-T1-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
SI4925BDY-T1-GE3 сопутствующие товары
Комментарии
Vishay Siliconix
SI7956DP-T1-GE3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7234DP-T1-GE3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7942DP-T1-GE3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI4904DY-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7962DP-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7956DP-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7236DP-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI8900EDB-T2-E1
MOSFET 2N-CH 150V 2.6A PPAK SO-8
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
