Vishay Siliconix SI7956DP-T1-E3
- SI7956DP-T1-E3
- Vishay Siliconix
- MOSFET 2N-CH 150V 2.6A PPAK SO-8
- Transistors - FETs, MOSFETs - Arrays
- SI7956DP-T1-E3 Лист данных
- PowerPAK® SO-8 Dual
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 2423
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SI7956DP-T1-E3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET 2N-CH 150V 2.6A PPAK SO-8 |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 Dual |
Supplier Device Package PowerPAK® SO-8 Dual |
Power - Max 1.4W |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 150V |
Current - Continuous Drain (Id) @ 25°C 2.6A |
Rds On (Max) @ Id, Vgs 105mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds - |
Package_case PowerPAK® SO-8 Dual |
SI7956DP-T1-E3 Гарантии
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